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RJK03A4DPA Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK03A4DPA Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK03A4DPA Preliminary R07DS0094EJ0400 Rev.4.00 Page 4 of 6 Mar 21, 2013 Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature 10 8 6 4 2 –25 0 25 50 75 100 125 150 0 ID = 5 A, 10 A, 20 A VGS = 4.5 V 10 V Pulse Test 5 A, 10 A, 20 A Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 50 40 30 20 10 25 50 75 100 125 150 0 IAP = 18 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Pulse Test 5 V VGS = 0, –5 V 10 V Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 30 20 10000 3000 1000 300 100 30 10 VGS = 0 f = 1 MHz Crss Coss Ciss Gate Charge Qg (nc) Dynamic Input Characteristics 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 0 ID = 42 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V |
Similar Part No. - RJK03A4DPA_13 |
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Similar Description - RJK03A4DPA_13 |
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