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VRF3933 Datasheet(PDF) 3 Page - Microsemi Corporation |
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VRF3933 Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 6 page 0 0.05 0.10 0.15 0.20 0.25 0.30 10-5 10-4 10-3 10-2 10 1.0 10 -1 Peak T J = P DM x Z θJC + TC Duty Factor D = t1/t2 t2 t1 Note: t1 = Pulse Duration RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 44 46 48 50 52 54 56 58 23 24 25 26 27 28 29 17 22 27 32 37 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600 17 22 27 32 37 P IN, (dBm) Figure 6. P OUT and Gain vs PIN P IN, (dBm) Figure 7. Eff and P OUT vs. PIN Po W OutEff Freq=30MHz Freq=30MHz FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Z IN - Gate shunted with 25Ω I dq = 250mA Z OL - Conjugate of optimum load for 300 Watts output at Vdd=50V Freq. (MHz) Z in Z out 2 21 - j 8.5 14.1 - j 0.6 13.5 4.5 - j 6.5 12.9 - j 4 27.1 2.9 - j 3.1 9.7 - j 6.6 40.7 2.5 - j 2 7.6 - j 7 65 2.4 - j 2.07 4.5 - j 6.6 0.3 D = 0.9 0.7 SINGLE PULSE 0.5 0.1 0.05 Pout Gain VRF3933(MP) 0.0202 0.0507 0.1199 0.00647F 0.02043F 0.2421F 7.962F TJ (°C) 0.0792 TC (°C) |
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