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HITJ0201MPTL-HQ Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HITJ0201MPTL-HQ Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page HITJ0201MP Preliminary R07DS0473EJ0200 Rev.2.00 Page 5 of 6 May 09, 2013 Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc (°C) tf Pulse Test Tc = 25°C – 10V – 5V VGS = 0 V 5, 10 V –0.2 –0.3 –0.4 –0.5 –0.6 0 –4 –2 –6 –8 –10 25 50 75 100 125 150 0 –0.4 –0.8 –1.2 –1.6 –2.0 800 850 900 950 1000 1050 1100 – 10 –8 –6 –4 –20 2 4 8 610 10 100 1000 –0 –5 –10 –15 –20 1 10 100 1000 – 0.1 – 1 – 10 0 2468 10 0 –20 –40 0 –4 –8 –12 –16 ID = –3.4 A Tc = 25°C –10 V VDD = –20 V –10 V 12 VDD = –20 V VGS VDS –5 V –5 V 16 VDD = –10 V VGS = –4.5 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C td(on) td(off) tr VDS = 0 V f = 1 MHz –1 mA ID = –10 mA VGS = 0 Crss Coss VGS = 0 V f = 1 MHz Ciss |
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