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DB2S31400L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DB2S31400L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Ver. EED Publication date: April 2013 1 DB2S314 Silicon epitaxial planar type For high speed switching circuits DB2J314 in SSMini2 type package Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C6 Packaging DB2S31400L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30 V Forward current IF 30 mA Peak forward current IFM 150 mA Junction temperature Tj 125 ° C Operating ambient temperature Topr –40 to +85 ° C Storage temperature Tstg –55 to +125 ° C Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1.0 Reverse current IR VR = 30 V 300 nA Terminal capacitance Ct VR = 10 V, f = 1 MHz 1.5 pF Reverse recovery time *1 trr IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω 1.0 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz *1: trr measurement circuit Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA IR = 10 mA RL = 100 Ω 10% Irr = 1 mA tr tp trr VR IF t t A Input Pulse Output Pulse Unit: mm 1: Cathode 2: Anode Panasonic SSMini2-F5-B JEITA SC-79 Code SOD-523 |
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