ATF-34143-BLKG datasheet(6/14 Pages) AVAGO

Part #	ATF-34143-BLKG

Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA

Freq

(GHz)

P1dB

(dBm)

Id

(mA)

G1dB

(dB)

PAE1dB

(%)

P3dBm

(dBm)

Id

(mA)

PAE3dB

(%)

Gamma

Out_mag

(Mag)

Gamma

Out_ang

(Degrees)

0.9

20.9

114

25.7

27

22.8

108

44

0.34

136

1.5

21.7

115

21.9

32

23.1

95

53

0.31

152

1.8

21.3

111

20.5

30

23.0

105

47

0.30

164

2

22.0

106

19.5

37

23.7

115

50

0.28

171

4

22.7

110

12.7

40

23.6

111

47

0.26

-135

6

23.3

115

9.2

41

24.2

121

44

0.24

-66

ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA

Freq

(GHz)

P1dB

(dBm)

Id

(mA)

G1dB

(dB)

PAE1dB

(%)

P3dBm

(dBm)

Id

(mA)

PAE3dB

(%)

Gamma

Out_mag

(Mag)

Gamma

Out_ang

(Degrees)

0.9

18.2

75

27.5

22

20.5

78

36

0.48

102

1.5

18.7

58

24.5

32

20.8

59

51

0.45

117

1.8

18.8

57

23.0

33

21.1

71

45

0.42

126

2

18.8

59

22.2

32

21.9

81

47

0.40

131

4

20.2

66

13.9

38

22.0

77

48

0.25

-162

6

21.2

79

9.9

37

23.5

102

46

0.18

-77

Pin (dBm)

Figure 20. Swept Power Tuned for Power

at 2 GHz, VDS=4V, IDSQ=120mA.

-30

-10

-20

10

020

80

50

40

30

20

10

0

-10

Pout

Gain

PAE

Pin (dBm)

Figure 21. Swept Power Tuned for Power at 2 GHz,

VDS = 4V, IDSQ =60 mA.

-30

-10

-20

10

020

80

60

40

20

0

-20

Pout

Gain

PAE

Notes:

1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,

the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class

B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant

current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm

is approached.

2. PAE(%) = ((Pout – Pin)/Pdc) x 100

3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

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