ATF-34143-BLKG datasheet(5/14 Pages) AVAGO

Part #	ATF-34143-BLKG

Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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ATF-34143 Typical Performance Curves, continued

Note:

1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,

the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class

B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant

current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm

is approached.

Figure 19. P1dB vs. IDS Active Bias Tuned for min NF @

4V, 60 mA at 900 MHz.

FREQUENCY (MHz)

Figure 15. P1dB, IP3 vs. Frequencyand Temperature at VDS

=4V,IDS=60 mA.[1]

0

2000

4000

6000

8000

33

31

29

27

25

23

21

19

17

85 C

25 C

-40 C

OIP3

P1dB

IDSQ (mA)

Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and

3.9 GHz Tuned for Noise Figure.[1]

040

20

80

100

120

60

140

Gain

OP1dB

OIP3

NF

35

30

25

20

15

10

5

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

IDSQ (mA)

Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and

5.8 GHz Tuned for Noise Figure.[1]

040

20

80

100

120

60

Gain

OP1dB

OIP3

NF

30

27

24

21

18

15

12

9

6

3

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

FREQUENCY (GHz)

Figure 14. Fmin and Ga vs. Frequencyand Temperature

at VDS=4V,IDS=60 mA.

0

2000

4000

6000

8000

25

20

15

10

1.5

1.0

0.5

0

85 C

25 C

-40 C

IDS (mA)

Figure 18. P1dB vs. IDS Active Bias Tuned for NF @ 4V, 60

mA at 2 GHz.

0

100

50

150

25

20

15

10

5

0

-5

3 V

4 V

IDS (mA)

0

100

50

150

25

20

15

10

5

0

-5

3 V

4 V

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ATF-34143-BLKG Datasheet(PDF) 5 Page - AVAGO TECHNOLOGIES LIMITED

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