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AD8668 Datasheet(PDF) 3 Page - Analog Devices |
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AD8668 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 24 page  Data Sheet ADA4075-2 Rev. B | Page 3 of 24 SPECIFICATIONS VSY = ±15 V, VCM = 0 V, TA = 25°C, SOIC package, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 0.2 1 mV −40°C ≤ TA ≤ +125°C 1.2 mV Input Bias Current IB 30 100 nA −40°C ≤ TA ≤ +125°C 150 nA Input Offset Current IOS 5 50 nA −40°C ≤ TA ≤ +125°C 75 nA Input Voltage Range −40°C ≤ TA ≤ +125°C −12.5 +12.5 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 110 118 dB −40°C ≤ TA ≤ +125°C 106 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = −11 V to +11 V 114 117 dB −40°C ≤ TA ≤ +125°C 108 dB RL = 600 Ω, VO = −10 V to +10 V 112 117 dB −40°C ≤ TA ≤ +125°C 106 dB Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 0.3 μV/°C Input Resistance, Differential Mode RINDM 1.5 MΩ Input Resistance, Common Mode RINCM 500 MΩ Input Capacitance, Differential Mode CINDM 2.4 pF Input Capacitance, Common Mode CINCM 2.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 2 kΩ to GND 12.8 13 V −40°C ≤ TA ≤ +125°C 12.5 V RL = 600 Ω to GND 12.4 12.8 V −40°C ≤ TA ≤ +125°C 12 V VSY = ±18 V, RL = 600 Ω to GND 15 15.8 V −40°C ≤ TA ≤ +125°C 14 V Output Voltage Low VOL RL = 2 kΩ to GND −14 −13.6 V −40°C ≤ TA ≤ +125°C −13 V RL = 600 Ω to GND −13.6 −13 V −40°C ≤ TA ≤ +125°C −12.5 V VSY = ±18 V, RL = 600 Ω to GND −16.6 −16 V −40°C ≤ TA ≤ +125°C −15 V Short-Circuit Current ISC 40 mA Closed-Loop Output Impedance ZOUT f = 1 kHz, AV = 1 0.1 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±4.5 V to ±18 V 106 110 dB −40°C ≤ TA ≤ +125°C 100 dB Supply Current per Amplifier ISY VSY = ±4.5 V to ±18 V, IO = 0 mA 1.8 2.25 mA −40°C ≤ TA ≤ +125°C 3.35 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ, AV = 1 12 V/μs Settling Time tS To 0.01%, VIN = 10 V step, RL = 1 kΩ 3 μs Gain Bandwidth Product GBP RL = 1 MΩ, CL = 35 pF, AV = 1 6.5 MHz Phase Margin ΦM RL = 1 MΩ, CL = 35 pF, AV = 1 60 Degrees THD + NOISE Total Harmonic Distortion and Noise THD + N RL = 2 kΩ, AV = 1, VIN = 3 V rms, f = 1 kHz 0.0002 % NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 60 nV p-p Voltage Noise Density en f = 1 kHz 2.8 nV/√Hz Current Noise Density in f = 1 kHz 1.2 pA/√Hz |
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