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R1EX24512BSAS0G Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1EX24512BSAS0G Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 18 page Preliminary Datasheet R1EX24512BSAS0G R1EX24512BTAS0G Two-wire serial interface 512k EEPROM (64-kword 8-bit) R10DS0111EJ0200 Rev.2.00 Page 1 of 16 Feb. 18, 2013 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). R1EX24xxxG series improves the write/erase endurance in addition to suitable for the high temperature industrial application that makes the best use of the feature of advanced MONOS memory cell structure. Features Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2C serial bus) Clock frequency: 1 MHz (2.5 V to 5.5 V) / 400 kHz (1.8 V to 5.5 V) Power dissipation: Standby: 2 A (max) Active (Read): 1 mA (max) Active (Write): 5 mA (max) Automatic page write: 128-byte/page Write cycle time: 5 ms Endurance: 1,000k Cycles @105C Data retention: 20 Years @105C Small size packages: SOP-8pin, TSSOP-8pin Shipping tape and reel TSSOP 8-pin: 3,000 IC/reel SOP 8-pin: 2,500 IC/reel Temperature range: 40 to +105C Lead free products. Halogen free products. R10DS0111EJ0200 Rev.2.00 Feb. 18, 2013 105°C I2C-bus EEPROM |
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