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STU150N3LLH6 Datasheet(PDF) 7 Page - STMicroelectronics |
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STU150N3LLH6 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 16 page STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical characteristics Doc ID 15227 Rev 3 7/16 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 20 Qg(nC) (V) 80 8 40 60 10 VDD=15V ID=80A 100 12 AM04000v1 C 4600 3100 1600 100 0 10 VDS(V) (pF) 5 15 Ciss Coss Crss 6100 20 25 f=1MHz AM00893v1 VGS(th) 1.0 0.6 0.4 0.2 -50 0 TJ(°C) (norm) 1.1 50 100 0.8 150 ID=250µA AM04901v1 RDS(on) 1.4 0.8 0.4 0 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.2 0.6 1.2 1.0 1.6 ID=40A VGS=10V AM04902v1 VSD 0 40 ISD(A) (V) 20 60 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=-50°C TJ=175°C TJ=25°C AM04906v1 |
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