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HUFA76409D3S Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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HUFA76409D3S Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76409D3, HUFA76409D3S Rev. A PSPICE Electrical Model .SUBCKT HUFA76409D 2 1 3 ; rev 23 August 1999 CA 12 8 6.30e-10 CB 15 14 6.30e-10 CIN 6 8 4.60e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 66.55 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.00e-9 LGATE 1 9 3.73e-9 LSOURCE 3 7 3.43e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1.88e-2 RGATE 9 20 3.76 RLDRAIN 2 5 10 RLGATE 1 9 37.3 RLSOURCE 3 7 34.3 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.40e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*43),3))} .MODEL DBODYMOD D (IS = 3.84e-13 RS = 1.56e-2 TRS1 = -1.0e-3 TRS2 = 7.0e-6 CJO = 6.4e-10 TT = 5.10e-8 XTI =4.35 M = 0.52) .MODEL DBREAKMOD D (RS = 3.70e- 1TRS1 = 9.10e- 4TRS2 = -1e-6) .MODEL DPLCAPMOD D (CJO = 3.70e-1 0IS = 1e-3 0N = 10 M = 0.79) .MODEL MMEDMOD NMOS (VTO = 2.08 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.76) .MODEL MSTROMOD NMOS (VTO = 2.40 KP = 28 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.80 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 37.6 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.13e- 3TC2 = -3.00e-7) .MODEL RDRAINMOD RES (TC1 = 9.80e-3 TC2 = 2.85e-5) .MODEL RSLCMOD RES (TC1 = 5.00e-3 TC2 = 5.05e-6) .MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -1.48e-3 TC2 = -8.30e-6) .MODEL RVTEMPMOD RES (TC1 = -1.68e- 3TC2 = 8e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -2.8) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.8 VOFF= -5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUFA76409D3, HUFA76409D3S |
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