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AUIRFR4620 Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFR4620 Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page 06/10/11 www.irf.com 1 HEXFET® Power MOSFET S D G AUIRFR4620 PD - 97681 VDSS 200V RDS(on) typ. 64m: max. 78m : ID 24A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * AUTOMOTIVE GRADE Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ GD S Gate Drain Source D-Pak AUIRFR4620 G S D Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally limited) d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.045 RθJA Junction-to-Ambient (PCB Mount) i ––– 50 RθJA Junction-to-Ambient ––– 110 Max. 24 17 100 144 54 -55 to + 175 ± 20 0.96 113 See Fig. 14, 15, 22a, 22b, °C/W °C 300 |
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