06/10/11

www.irf.com

1

S

D

G

AUIRFR4620

200V

64m:

max.

78m

:

24A

Description

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

Features

●

Advanced Process Technology

●

Ultra Low On-Resistance

●

Dynamic dV/dT Rating

●

175°C Operating Temperature

●

Fast Switching

●

Repetitive Avalanche Allowed up to Tjmax

●

Lead-Free, RoHS Compliant

●

Automotive Qualified *

AUTOMOTIVE GRADE

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

*Qualification standards can be found at http://www.irf.com/

GD

S

Gate

Drain

Source

D-Pak

AUIRFR4620

G

S

D

Symbol

Parameter

Units

A

Pulsed Drain Current

c

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally limited) d

mJ

Avalanche Current c

A

Repetitive Avalanche Energy c

mJ

dv/dt

Peak Diode Recovery

e

V/ns

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case j

–––

1.045

Junction-to-Ambient (PCB Mount) i

–––

50

Junction-to-Ambient

–––

110

Max.

24

17

100

144

54

-55 to + 175

± 20

0.96

113

See Fig. 14, 15, 22a, 22b,

°C/W

°C

300