AN807 datasheet(4/8 Pages) VISHAY

Part #	AN807

Description	N-Channel 40-V (D-S) MOSFET

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Document Number: 72322

S09-0130-Rev. B, 02-Feb-09

Vishay Siliconix

Si2318DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?72322.

Threshold Voltage

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power

0.01

0

1

10

4

6

100

600

0.1

Time (s)

2

8

10

TA = 25 °C

Safe Operating Area, Junction-to-Case

VDS - Drain-to-Source Voltage (V)

100

1.0

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

10 µs

100 µs

1 ms

1 s, 10 s

100 s, DC

*VGS > minimum VGS at which RDS(on) is specified

Limited by RDS(on)*

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 166 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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