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HUF76143S3S Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUF76143S3S Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2003 Fairchild Semiconductor Corporation HUF76143P3, HUF76143S3S Rev. B1 HUF76143P3, HUF76143S3S 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76143. Features • Logic Level Gate Drive • 75A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.0055Ω • Temperature Compensating PSPICE® Model • Temperature Compensating SABER© Mode • Thermal Impedance SPICE Model • Thermal Impedance SABER Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB Ordering Information PART NUMBER PACKAGE BRAND HUF76143P3 TO-220AB 76143P HUF76143S3S TO-263AB 76143S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76143S3ST. D G S DRAIN SOURCE GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) Data Sheet January 2003 |
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