HUF76121S3S datasheet(2/11 Pages) FAIRCHILD

Part #	HUF76121S3S

Description	47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

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HUF76121P3, HUF76121S3S Rev. C1

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

30

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

30

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

47

25

24

Figure 4

A

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 17,18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75

0.6

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-40 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Specifications

TA = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 12)

30

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 25V, VGS = 0V

-

1

µA

VDS = 25V, VGS = 0V, TC = 150

oC-

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 11)

1

-

3

V

Drain to Source On Resistance

rDS(ON)

ID = 47A, VGS = 10V (Figures 9, 10)

-

0.015

0.021

Ω

ID = 25A, VGS = 5V (Figure 9)

-

0.019

0.028

Ω

ID = 24A, VGS = 4.5V (Figure 9)

-

0.021

0.031

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

RθJC

(Figure 3)

-

1.66

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-220 and TO-263

-

62

oC/W

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time

tON

VDD = 15V, ID ≅ 24A, RL = 0.63Ω,

VGS = 4.5V, RGS = 10.0Ω

(Figures 15, 21, 22)

--

265

ns

Turn-On Delay Time

td(ON)

-15

-

ns

Rise Time

tr

-160

-

ns

Turn-Off Delay Time

td(OFF)

-14

-

ns

Fall Time

tf

-31

-

ns

Turn-Off Time

tOFF

--

70

ns

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