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AP1117DXXG-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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AP1117DXXG-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 13 page AP1117/AP1117I Document number: DS31009 Rev. 23 - 2 4 of 13 www.diodes.com June 2013 © Diodes Incorporated AP1117/AP1117I Electrical Characteristics (cont.) (@TA = +25°C, unless otherwise specified.) Parameter Conditions Min Typ Max Unit Load Regulation (cont.) AP1117-3.3 VIN = 5V, 0 ≤ IOUT ≤ 1A, TA = +25°C (Notes 5, 6) — 26 33 mV AP1117-5.0 VIN = 8V, 0 ≤ IOUT ≤ 1A, TA = +25°C (Notes 5, 6) — 40 50 mV Dropout Voltage (VIN-VOUT) AP1117-ADJ/1.5/1.8 2.5/3.3/5.0 IOUT = 800mA, VOUT = 1% VOUT 0°C ≤ TJ ≤ +125°C — 1.2 1.3 V Dropout Voltage (VIN-VOUT) AP1117-ADJ/1.5/1.8 2.5/3.3/5.0 IOUT = 1A, VOUT = 1% VOUT 0°C ≤ TJ ≤ +125°C — 1.3 1.4 V AP1117I-ADJ/1.5/1.8 2.5/3.3/5.0 -40°C ≤ TJ ≤ +125°C Current Limit AP1117-ADJ/1.5/1.8 2.5/3.3/5.0 (VIN-VOUT) = 5V 1. 1 — — A Minimum Load Current (Note 7) AP1117-XXX 0°C ≤ TJ ≤ +125°C — 5 10 mA Thermal Regulation TA = +25°C, 30ms pulse — 0.008 0.040 %/W Ripple Rejection F = 180Hz, COUT = 25µF Tantalum, IOUT = 1A — — — — AP1117-XXX VIN = VOUT +3V — 60 70 dB Temperature Stability IO = 10mA — 0.5 — % θJA Thermal Resistance Junction-to-Ambient θJA SOT89-3: Control Circuitry/Power Transistor (Note 8) SOT223: Control Circuitry/Power Transistor (Note 9) TO252: Control Circuitry/Power Transistor (Note 8) TO220-3: Control Circuitry/Power Transistor (Note 8) TO263: Control Circuitry/Power Transistor (Note 8) — — — — — 164 107 73 78 60 — — — — — °C/W θJC Thermal Resistance Junction-to-Case SOT89-3: Control Circuitry/Power Transistor (Note 8) SOT223: Control Circuitry/Power Transistor (Note 9) TO252: Control Circuitry/Power Transistor (Note 8) TO220-3: Control Circuitry/Power Transistor (Note 8) TO263: Control Circuitry/Power Transistor (Note 8) — — — — — 42 15 12 3.5 3.5 — — — — — °C/W Notes: 7. Quiescent current is defined as the minimum output current required in maintaining regulation. At 12V input/output differential the device is guaranteed to regulate if the output current is greater than 10mA. 8. Test conditions for SOT89-3, TO220-3, TO252 and TO263: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper,with minimum recommended pad layout, no air flow. The case point of θJC is located on the thermal tab. 9. Test conditions for SOT223: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with 5mm x 5mm thermal pad layout, no air flow. The case point of θJC is located on the thermal tab. |
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