©2003 Fairchild Semiconductor Corporation

HUF76107D3, HUF76107D3S Rev. B1

HUF76107D3, HUF76107D3S

20A, 30V, 0.052 Ohm, N-Channel, Logic

Level UltraFET Power MOSFETs

These N-Channel power

MOSFETs are manufactured using

the innovative UltraFET™ process.

This advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is

capable of withstanding high energy in the avalanche mode

and the diode exhibits very low reverse recovery time and

stored charge. It was designed for use in applications

where power efficiency is important, such as switching

regulators, switching converters, motor drivers, relay

drivers, low voltage bus switches, and power management

in portable and battery operated products.

Formerly developmental type TA76107.

Features

• Logic Level Gate Drive

• 20A, 30V

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76107D3

TO-251AA

76107D

HUF76107D3S

TO-252AA

76107D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.

D

G

S

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet

January 2003