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R1LV0416DSB-7LI Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # R1LV0416DSB-7LI
Description  4M SRAM (256-kword16-bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1LV0416DSB-7LI Datasheet(HTML) 9 Page - Renesas Technology Corp

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R1LV0416D Series
Write Cycle
R1LV0416D
-5SI
-7LI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
55
70
ns
Address valid to end of write
t
AW
50
60
ns
Chip selection to end of write
t
CW
50
60
ns
5
Write pulse width
t
WP
40
50
ns
4
LB#, UB# valid to end of write
t
BW
50
55
ns
Address setup time
t
AS
0
0
ns
6
Write recovery time
t
WR
0
0
ns
7
Data to write time overlap
t
DW
25
30
ns
Data hold from write time
t
DH
0
0
ns
Output active from end of write
t
OW
5
5
ns
2
Output disable to output in high-Z
t
OHZ
0
20
0
25
ns
1, 2, 3
Write to output in high-Z
t
WHZ
0
20
0
25
ns
1, 2
Notes: 1. t
CHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not
referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ max is less than tLZ min both for a given device and from
device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write
begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB#
going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and
LB# going high or UB# going high. t
WP is measured from the beginning of write to the end of write.
5. t
CW is measured from the later of CS1# going low or CS2 going high to the end of write.
6. t
AS is measured from the address valid to the beginning of write.
7. t
WR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
Rev.1.00, May.24.2007, page 9 of 15


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