R1LV0416DSB-5SIS0 datasheet(6/19 Pages) RENESAS

Part #	R1LV0416DSB-5SIS0

Description	4M SRAM (256-kword 횞 16-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

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6 / 19 page

R1LV0416D Series

DC Characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input leakage current

|I

LI|



1

µA Vin = V

SS to VCC

Output leakage current

|I

LO|



1

µA CS1# = V

IH or CS2 = VIL or

OE# = V

IH or WE# = VIL or

LB# = UB# = V

IH,

V

I/O = VSS to VCC

Operating current

I

CC



20

mA

CS1# = V

IL, CS2 = VIH,

Others = V

IH/VIL, II/O = 0 mA

I

CC1



25

mA

Min. cycle, duty = 100%,

I

I/O = 0 mA, CS1# = VIL,

CS2 = V

IH,

Others = V

IH/VIL

Average operating current

I

CC2



5

mA

Cycle time = 1

µs,

duty = 100%,

I

I/O = 0 mA, CS1# ≤ 0.2 V,

CS2

≥ V

CC − 0.2 V

V

IH ≥ VCC − 0.2 V, VIL ≤ 0.2 V

Standby current

I

SB



0.1*

1

0.3

mA

CS2 = V

IL

to +85

°C

I

SB1



10

µA

to +70

°C

I

SB1



8

µA

to +40

°C

I

SB1



3

µA

−5SI

to +25

°C

I

SB1



1*

1

2.5

µA

to +85

°C

I

SB1



20

µA

to +70

°C

I

SB1



16

µA

to +40

°C

I

SB1



10

µA

Standby current

−7LI

to +25

°C

I

SB1



1*

1

10

µA

Vin

≥ 0 V

(1) 0 V

≤ CS2 ≤ 0.2 V or

(2) CS1#

≥ V

CC − 0.2 V,

CS2

≥ V

CC − 0.2 V or

(3) LB# = UB#

≥ V

CC − 0.2 V,

CS2

≥ V

CC − 0.2 V,

CS1#

≤ 0.2 V

Average values

V

OH

2.4

—

V

I

OH = −1 mA

Output high voltage

V

OH2

V

CC − 0.2

—

V

I

OH = −100 µA

V

OL

—

0.4

V

I

OL = 2 mA

Output low voltage

V

OL2

—

0.2

V

I

OL = 100 µA

Note:

1. Typical values are at V

CC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.

Capacitance

(Ta = +25

°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Note

Input capacitance

Cin



8

pF

Vin = 0 V

1

Input/output capacitance

C

I/O



10

pF

V

I/O = 0 V

1

Note:

1. This parameter is sampled and not 100% tested.

Rev.1.00, May.24.2007, page 6 of 15

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