IS62WV5128ALL-70HI datasheet(6/17 Pages) ISSI

Part #	IS62WV5128ALL-70HI

Description	512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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6

Integrated Silicon Solution, Inc. — www.issi.com

Rev. E

01/29/08

IS62WV5128ALL,

IS62WV5128BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

62WV5128ALL (1.65V-2.2V)

Symbol Parameter

TestConditions

Max.

Unit

70ns

ICC

VDDDynamicOperating

VDD=Max.,

Com.

25

mA

SupplyCurrent

IOUT = 0 mA, f = fMAX

Ind.

30

ICC1

OperatingSupply

VDD=Max.,

CS1=0.2V Com.

10

mA

Current

WE=VDD-0.2V

Ind.

10

f=1MHZ

ISB1

TTLStandbyCurrent

VDD=Max.,

Com.

0.35

mA

(TTLInputs)

VIN =VIH or VIL

Ind.

0.35

CS1=VIH,

f = 1 MHZ

ISB2

CMOSStandby

VDD=Max.,

Com.

15

µA

Current(CMOSInputs)

CS1

≥VDD–0.2V,

Ind.

15

VIN

≥VDD–0.2V,or

VIN

≤0.2V,f=0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

62WV5128BLL (2.5V - 3.6V)

Symbol Parameter

Test Conditions

Max.

Unit

55 ns

ICC

VDD Dynamic Operating

VDD = Max.,

Com.

40

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

45

ICC1

Operating Supply

VDD = Max.,

CS1 = 0.2V Com.

15

mA

Current

WE = VDD-0.2V

Ind.

15

f=1MHZ

ISB1

TTL Standby Current

VDD = Max.,

Com.

0.35

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

0.35

CS1 = VIH,

f = 1 MHZ

ISB2

CMOS Standby

VDD = Max.,

Com.

15

µA

Current (CMOS Inputs)

CS1

≥ VDD – 0.2V,

Ind.

15

VIN

≥ VDD – 0.2V, or

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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