4

Integrated Silicon Solution, Inc. — www.issi.com

Rev. E

01/29/08

IS62WV5128ALL,

IS62WV5128BLL

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

1.65-2.2V

1.4

—

V

2.5-3.6V

2.2

—

V

Output LOW Voltage

1.65-2.2V

—

0.2

V

2.5-3.6V

—

0.4

V

Input HIGH Voltage

1.65-2.2V

1.4

V

2.5-3.6V

2.2

V

Input LOW Voltage

1.65-2.2V

–0.2

0.4

V

2.5-3.6V

–0.2

0.6

V

Input Leakage

GND

–1

1

µA

Output Leakage

GND

–1

1

µA

Notes:

Symbol

Parameter

Value

Unit

Terminal Voltage with Respect to GND

V

V

Storage Temperature

–65 to +150

°C

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

Range

Ambient Temperature

IS62WV5128ALL

IS62WV5128BLL

Commercial

0°C to +70°C

1.65V - 2.2V

2.5V - 3.6V

Industrial

–40°C to +85°C

1.65V - 2.2V

2.5V - 3.6V