IS64WV5128EDBLL-10KLA1 datasheet(7/14 Pages) ISSI

Part #	IS64WV5128EDBLL-10KLA1

Description	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com

7

Rev. B

11/08/2011

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IS61/64WV5128EDBLL

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)

-8

-10

-20

Symbol

Parameter

Min. Max.

Min.

Max.

Unit

twC

WriteCycleTime

8—

10—

20—

ns

tsCe

CE

toWriteEnd

6.5—

8—

12—

ns

taw

AddressSetupTime

6.5—

8—

12—

ns

toWriteEnd

tha

AddressHoldfromWriteEnd

0—

ns

tsa

AddressSetupTime

0—

ns

tPwe1

WE

PulseWidth

6.5—

8—

12—

ns

tPwe2

WE

PulseWidth(OE=LOW)8.0—

10—

17—

ns

tsd

DataSetuptoWriteEnd

5—

6—

9—

ns

thd

DataHoldfromWriteEnd

0—

ns

thzwe(2)

WE

LOWtoHigh-ZOutput

—3.5

—5

—9

ns

tlzwe(2)

WE

HIGHtoLow-ZOutput

2—

ns

Notes:

1. TestconditionsandoutputloadingconditionsarespecifiedintheACTestConditionsandACTestLoads(Figure1).

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. TheinternalwritetimeisdefinedbytheoverlapofCELOW,andWELOW.Allsignalsmustbeinvalidstatestoinitiatea

Write,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherising

orfallingedgeofthesignalthatterminatesthewrite.Shadedareaproductindevelopment

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