IS61LV25616AL-12TI datasheet(8/16 Pages) ISSI

Part #	IS61LV25616AL-12TI

Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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8

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. F

12/15/2011

IS61LV25616AL

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)

-10

-12

Symbol

Parameter

Min. Max.

Unit

twc

WriteCycleTime

10

—

12

—

ns

tsce

CE

toWriteEnd

8

—

8

—

ns

taw

AddressSetupTimetoWriteEnd

8

—

8

—

ns

tHa

AddressHoldfromWriteEnd

0

—

0

—

ns

tsa

AddressSetupTime

0

—

0

—

ns

tPwb

LB

,UBValidtoEndofWrite

8

—

8

—

ns

tPwe1

WE

PulseWidth

8

—

8

—

ns

tPwe2

WE

PulseWidth(OE=LOW)

10

—

12

—

ns

tsD

DataSetuptoWriteEnd

6

—

6

—

ns

tHD

DataHoldfromWriteEnd

0

—

0

—

ns

tHzwe(2)

WE

LOWtoHigh-ZOutput

—

5

—

6

ns

tLzwe(2)

WE

HIGHtoLow-ZOutput

2

—

2

—

ns

Notes:

1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0V

to3.0VandoutputloadingspecifiedinFigure1.

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. TheinternalwritetimeisdefinedbytheoverlapofCELOWandUBorLBandWELOW.Allsignalsmustbeinvalid

statestoinitiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtiming

arereferencedtotherisingorfallingedgeofthesignalthatterminatesthewrite.

tRC

tOHA

tAA

tDOE

tLZOE

tACE

tLZCE

tHZOE

HIGH-Z

DATA VALID

UB_CEDR2.eps

tHZB

ADDRESS

OE

CE

LB, UB

DOUT

tHZCE

tBA

tLZB

tRC

tPD

ISB

ICC

50%

VDD

Supply

Current

50%

tPU

READ CYCLE NO. 2(1,3)

Notes:

1. WEisHIGHforaReadCycle.

2. Thedeviceiscontinuouslyselected.OE,CE,UB,orLB=VIL.

3. AddressisvalidpriortoorcoincidentwithCELOWtransition.

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