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IS42S16160B-7BLI Datasheet(PDF) 2 Page - Integrated Silicon Solution, Inc |
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IS42S16160B-7BLI Datasheet(HTML) 2 Page - Integrated Silicon Solution, Inc |
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2 / 62 page  2 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/28/08 IS42S83200B, IS42S16160B DEVICE OVERVIEW The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 67,108,864-bit bank is orga- nized as 8,192 rows by 512 columns by 16 bits or 8,192 rows by 1,024 columns by 8 bits. The 256Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 256Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE func- tion enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed num- ber of locations in a programmed sequence. The registra- tion of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations or full page, with a burst terminate option. CLK CKE CS RAS CAS WE A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA0 BA1 A10 A12 COMMAND DECODER & CLOCK GENERATOR MODE REGISTER REFRESH CONTROLLER REFRESH COUNTER SELF REFRESH CONTROLLER ROW ADDRESS LATCH COLUMN ADDRESS LATCH BURST COUNTER COLUMN ADDRESS BUFFER COLUMN DECODER DATA IN BUFFER DATA OUT BUFFER DQML DQMH DQ 0-15 VDD/VDDQ Vss/VssQ 13 13 9 13 13 9 16 16 16 16 512 (x 16) 8192 8192 8192 8192 MEMORY CELL ARRAY BANK 0 SENSE AMP I/O GATE BANK CONTROL LOGIC ROW ADDRESS BUFFER A11 2 FUNCTIONAL BLOCK DIAGRAM (FOR 4MX16X4 BANKS SHOWN) |
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