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IS61NF25618-10TQ Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS61NF25618-10TQ Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 20 page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. A 11/11/02 IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 ISSI® ISSI reserves the right to make changes this specification herein and it products at any time without notice. ISSI assumes no responsibility or liability arising out of the application or use of any information, product or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. © Copyright 2000, Integrated Silicon Solution, Inc FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining for TQFP • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP, 119 PBGA package • Single +3.3V power supply (± 5%) • NF Version: 3.3V I/O Supply Voltage • NLF Version: 2.5V I/O Supply Voltage • Industrial temperature available DESCRIPTION The 4 Meg 'NF' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM NOVEMBER 2002 FAST ACCESS TIME Symbol Parameter -8.5 -9 -10 Units tKQ Clock Access Time 8.5 9 10 ns tKC Cycle Time 10 12 12 ns Frequency 100 83 83 MHz |
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