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BH33FB1WG-TR Datasheet(PDF) 7 Page - Rohm |
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BH33FB1WG-TR Datasheet(HTML) 7 Page - Rohm |
7 / 9 page 7/8 Technical Note BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, BH □□MA3WHFV series Noise terminal (BH MA3WHFV) The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding 100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T. Fig. 35: V OUT startup time vs. noise-filtering capacitor capacitance characteristics (Example) ~ Condition ~ VIN=4.0V Cin=1.0 μF Co=1.0 μF ROUT=3.0k Ω Ta=25 °C BH30MA3WHFV 100 10 1 0.1 0.01 100P 1000P 0.01 μ 0.1 μ noise-filtering capacitor capacitance Cn (F) Regarding input pin of the IC This monolithi c IC contains P+ isolatio n and P substrat e layer s between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig.37 The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (P substrate) voltage to input pins. Fig. 36: Example of bypass diode connection VCC CTL OUT GND back current Fig.37 GND C E B Parasitic elements (Terminal B) Parasitic element GND (Terminal A) GND GND E N N N N P P + P + P B O Parasitic elements (Terminal B) Transistor (NPN) P-board GND N N N P P P + P + (Terminal A) Resistor Parasitic element Other adjacent elements Part number selection Package HFV : HVSOF6 HVSOF5 G : SSOP5 BH 3 F B 1 W H F V 0 -T R ROHM part number Output voltage Current capacity MA3 : 300mA FB1 : 150mA LB1 : 150mA Shutdown switch W : With switch Package specification TR : Embossed taping 2010.07 - Rev. C www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. |
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