©2001 Fairchild Semiconductor Corporation

HUF75229P3 Rev. B

HUF75229P3

44A, 50V, 0.022 Ohm, N-Channel UltraFET

Power MOSFET

This N-Channel power MOSFET is

manufactured using the innovative

UltraFET® process. This advanced

process technology achieves the

lowest possible on-resistance per silicon area, resulting in

outstanding performance. This device is capable of

withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Features

• 44A, 50V

• Temperature Compensating PSPICE® Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75229P3

TO-220AB

75229P

NOTE: When ordering use the entire part number.

D

G

S

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

Data Sheet

December 2001