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HUF75229P3 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUF75229P3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation HUF75229P3 Rev. B HUF75229P3 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Features • 44A, 50V • Low On-Resistance, rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Ordering Information PART NUMBER PACKAGE BRAND HUF75229P3 TO-220AB 75229P NOTE: When ordering use the entire part number. D G S DRAIN SOURCE GATE DRAIN (FLANGE) Data Sheet December 2001 |
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