IR4312MTRPBF datasheet(9/17 Pages) IRF

Part #	IR4312MTRPBF

Description	2 channel integrated analog input Class D audio amplifier in a small 7 x 7 mm PQFN44 package

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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9 / 17 page

IR43x2

9

www.irf.com

Apr 3, 2013

Electrical Characteristics (cont’d)

VCC,VBS= 12 V, VSS=VS1=VS2=VN1=VN2=COM=0V, VAA=9.6V and TA=25C unless otherwise specified.

Symbol

Definition

Min

Typ

Max

Units

Test Conditions

Audio Input

(VGND=0, VAA=4.8V, VSS=-4.8V)

VOSn

Input offset voltage, n=1-2

-18

0

18

mV

IBINn

Input bias current, n=1-2

-

40

nA

GBWn

Small signal bandwidth in

OTA, n=1-2

-

9

-

MHz

CCOMP=1nF,

Rf=0

gmn

OTA transconductance, n=1-2

-

10

-

mS

VIN+=0V, VIN-

=10mV

GVn

OTA gain, n=1-2

50

-

dB

PWM

VthPWM

PWM comparator threshold in

COMP

-

(VAA -

VSS)/2

-

V

fOTAn

COMP pin star-up local

oscillation frequency, n=1-2

0.7

1.0

1.5

MHz

VCSD =GND

Ton_n

COMP to VS rising edge

propagation delay, n=1-2

-

370

-

ns

Toff_n

COMP to VS trailing edge

propagation delay, n=1-2

-

320

-

ns

DTn

Deadtime: Low-side turn-off to

High-side turn-on (DTLO-HO) &

High-side turn-off to Low-side

turn-on (DTHO-LO) , n=1-2

-

50

-

ns

VP=30V,

VN=-30V,

Power MOSFET (FET1, FET2, FET3, FET4) (IR4302)

V(BR)DSS

Drain-to-Source breakdown

voltage

80

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

39

50

mΩ

VGS=10V,

ID=3.3A

Qg

Total gate charge

-

7.3

-

nC

ILK0

VP leakage current, VS=VN

-

20

µA

ILK1

VP leakage current, VS=VP

-

50

µA

VP=80V, VCSD

=VSS

Power MOSFET (FET1, FET2, FET3, FET4) (IR4322)

V(BR)DSS

Drain-to-Source breakdown

voltage

60

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

30

40

mΩ

VGS=10V,

ID=3.3A

Qg

Total gate charge

-

8.3

-

nC

ILK0

VP leakage current, VS=VN

-

20

µA

ILK1

VP leakage current, VS=VP

-

50

µA

VP=60V, VCSD

=VSS

Power MOSFET (FET1, FET2, FET3, FET4) (IR4312)

V(BR)DSS

Drain-to-Source breakdown

voltage

40

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

44

56

mΩ

ID=3.6A

Qg

Total gate charge

-

4.5

-

nC

VGS=10V

ILK0

VP leakage current, VS=VN

-

20

µA

VP=40V, VCSD

=VSS

ILK1

VP leakage current, VS=VP

-

50

µA

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