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BAS16H Datasheet(PDF) 7 Page - NXP Semiconductors |
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BAS16H Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 20 page BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 7 of 20 NXP Semiconductors BAS16 series High-speed switching diodes (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Based on square wave currents. Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C f = 1 MHz; Tamb =25 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 006aab132 1 10 102 103 IF (mA) 10−1 VF (V) 0 1.4 1.0 0.4 0.8 0.2 1.2 0.6 (1) (2) (3) (4) mbg704 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 006aab133 102 IR ( µA) VR (V) 0 100 80 40 60 20 10 1 10−1 10−2 10−3 10−4 10−5 (1) (2) (3) (4) 08 16 12 4 0.8 0.6 0 0.4 0.2 mbg446 VR (V) Cd (pF) |
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