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HUF76419D3S Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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HUF76419D3S Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 10 page ©2001 Fairchild Semiconductor Corporation HUF76419D3, HUF76419D3S Rev. B PSPICE Electrical Model .SUBCKT HUF76419D3 2 1 3 ; rev 8 July 1999 CA 12 8 1.20e-9 CB 15 14 1.20e-9 CIN 6 8 8.49e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 68.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 2.51e-9 LSOURCE 3 7 3.57e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1.12e-2 RGATE 9 20 3.12 RLDRAIN 2 5 10 RLGATE 1 9 25.1 RLSOURCE 3 7 35.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 1.60e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))} .MODEL DBODYMOD D (IS = 8.51e-13 RS = 1.03e-2 TRS1 = 1.08e-3 TRS2 = 9.91e-7 CJO = 1.06e-9 TT = 4.90e-8 M = 0.5) .MODEL DBREAKMOD D (RS = 2.39e- 1TRS1 = 1.23e- 4TRS2 = 1.11e-6) .MODEL DPLCAPMOD D (CJO = 7.42e-1 0IS = 1e-3 0M = 0.85) .MODEL MMEDMOD NMOS (VTO = 1.98 KP = 2.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.12) .MODEL MSTROMOD NMOS (VTO = 2.33 KP = 50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.75 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 31.2 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.14e- 3TC2 = 1.02e-9) .MODEL RDRAINMOD RES (TC1 = 1.19e-2 TC2 = 3.22e-5) .MODEL RSLCMOD RES (TC1 = 9.91e-4 TC2 = 3.17e-5) .MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.34e-3 TC2 = -5.33e-6) .MODEL RVTEMPMOD RES (TC1 = -1.45e- 3TC2 = 0) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -3.0) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -5.5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.2 VOFF= 0.1) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.1 VOFF= -0.2) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUF76419D3, HUF76419D3S |
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