HGT4E30N60B3DS datasheet(2/8 Pages) FAIRCHILD

Part #	HGT4E30N60B3DS

Description	60A, 600V, UFS Series N-Channel IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

Absolute Maximum Ratings TC =25oC, Unless Otherwise Specified

HGTG30N60B3D,

HGT4E30N60B3DS

UNITS

Collector to Emitter Voltage .. .. .. .. .. .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. ..BVCES

600

V

Collector Current Continuous

At TC =25

oC . . . . . . ... .. .. .. .. .. .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. .. I

C25

60

A

At TC =110

oC . .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. . I

C110

30

A

Average Diode Forward Current at 110oC . .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. IEC(AVG)

25

A

Collector Current Pulsed (Note 1) . .. .. .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. .. ICM

220

A

Gate to Emitter Voltage Continuous.. .. .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . ... .. .. .. .. .. .. .. .. .. ... .. .. VGEM

±30

V

Switching Safe Operating Area at TJ =150

oC (Figure 2) .. .. .. .. .. .. .. .. ... .. .. SSOA

60A at 600V

Power Dissipation Total at TC =25

oC . . . . . . . . . . ... .. .. .. .. .. .. .. .. .. ... .. .. .. .P

D

208

W

Power Dissipation Derating TC >25

oC . .. .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. .. .. .

1.67

W/oC

Operating and Storage Junction Temperature Range . .. .. .. .. .. .. .. .. .. ... ..TJ,TSTG

-55to150

oC

Maximum Lead Temperature for Soldering .. .. .. ... .. .. .. .. .. .. .. .. .. ... .. .. .. . TL

260

oC

Short Circuit Withstand Time (Note 2) at VGE = 12V.. .. .. .. .. .. .. .. .. .. ... .. .. .. .tSC

4

µs

Short Circuit Withstand Time (Note 2) at VGE = 10V.. .. .. .. .. .. .. .. .. .. ... .. .. .. .tSC

10

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationof the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) =360V, TJ = 125

oC, R

G =3Ω.

Electrical Specifications

TC =25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC =250µA, VGE =0V

600

-

V

Collector to Emitter Leakage Current

ICES

VCE =BVCES

TC =25

oC

-

250

µA

TC =150

oC-

-

3

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC =IC110,

VGE =15V

TC =25

oC

-

1.45

1.9

V

TC =150

oC-

1.7

2.1

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC =250µA, VCE =VGE

4.2

5

6

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ =150

oC, R

G =3Ω,

VGE =15V, L =100µH

VCE (PK) = 480V

200

-

A

VCE (PK) =600V

60

-

A

Gate to Emitter Plateau Voltage

VGEP

IC =IC110,VCE =0.5 BVCES

-7.2

-

V

On-State Gate Charge

QG(ON)

IC =IC110,

VCE =0.5 BVCES

VGE = 15V

-

170

190

nC

VGE = 20V

-

230

250

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ =25

oC,

ICE =IC110,

VCE =0.8 BVCES,

VGE =15V,

RG =3Ω,

L=1mH ,

Test Circuit (Figure 19)

-36

-

ns

Current Rise Time

trI

-25

-

ns

Current Turn-Off Delay Time

td(OFF)I

-137

-

ns

Current Fall Time

tfI

-58

-

ns

Turn-On Energy

EON

-

550

800

µJ

Turn-Off Energy (Note 3)

EOFF

-

680

900

µJ

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