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JAN2N6764 Datasheet(PDF) 4 Page - Microsemi Corporation |
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JAN2N6764 Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 9 page  T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 4 of 9 2N6764, 2N6766, 2N6768 and 2N6770 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge VGS = 10 V, ID = 38.0 A, VDS = 50 V VGS = 10 V, ID = 30.0 A, VDS = 100 V VGS = 10 V, ID = 14.0 A, VDS = 200 V VGS = 10 V, ID = 12.0 A, VDS = 250 V 2N6764 2N6766 2N6768 2N6770 Qg(on) 125 115 110 120 nC Gate to Source Charge VGS = 10 V, ID = 38.0 A, VDS = 50 V VGS = 10 V, ID = 30.0 A, VDS = 100 V VGS = 10 V, ID = 14.0 A, VDS = 200 V VGS = 10 V, ID = 12.0 A, VDS = 250 V 2N6764 2N6766 2N6768 2N6770 Qgs 22 22 18 19 nC Gate to Drain Charge VGS = 10 V, ID = 38.0 A, VDS = 50 V VGS = 10 V, ID = 30.0 A, VDS = 100 V VGS = 10 V, ID = 14.0 A, VDS = 200 V VGS = 10 V, ID = 12.0 A, VDS = 250 V 2N6764 2N6766 2N6768 2N6770 Qgd 65 60 65 70 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N6764 2N6766 2N6768 2N6770 td(on) 35 ns Rise time ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N6764 2N6766 2N6768 2N6770 tr 190 ns Turn-off delay time ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N6764 2N6766 2N6768 2N6770 td(off) 170 ns Fall time ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N6764 2N6766 2N6768 2N6770 tf 130 ns Diode Reverse Recovery Time di/dt = 100 A/µs, VDD ≤ 30 V, I D = 38.0 A di/dt = 100 A/µs, VDD ≤ 30 V, I D = 30.0 A di/dt = 100 A/µs, VDD ≤ 30 V, I D = 14.0 A di/dt = 100 A/µs, VDD ≤ 30 V, I D = 12.0 A 2N6764 2N6766 2N6768 2N6770 trr 500 950 1200 1600 ns |
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