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DB2141300L Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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DB2141300L Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 5 page Product Standards Schottky Barrier Diode DB2141300L Electrical Characteristics Ta = 25 C 3 C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Page Reverse recovery time *1 trr 12 Forward voltage IF = IR = 100 mA, Irr = 10 mA IF = 2.0 A VF Reverse current Terminal capacitance Parameter Symbol Conditions Unit Max of 4 Min Typ 0.46 0.53 V 2 150 Ct VR = 10 V, f = 1 MHz pF IR VR = 40 V 25 μA ns 43 Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 μs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA 10% Irr = 10 mA tr tp trr VR IF t t A Input Pulse Output Pulse Doc No. TT4-EA-11458 Revision. 2 Established : 2009-08-17 Revised : 2013-04-19 |
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