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HGTP2N120CN, HGT1S2N120CN Rev. C

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insu-

lation damage by the electrostatic discharge of energy through

the devices. When handling these devices, care should be exer-

cised to assure that the static charge built in the handler’s body

capacitance is not discharged through the device. With proper

handling and application procedures, however, IGBTs are cur-

rently being extensively used in production by numerous equip-

ment manufacturers in military, industrial and consumer

applications, with virtually no damage problems due to electro-

static discharge. IGBTs can be handled safely if the following

basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting springs

or by the insertion into conductive material such as

“ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers, the

hand being used should be grounded by any suitable means

- for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from cir-

cuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rating

damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essen-

tially capacitors. Circuits that leave the gate open-circuited or

floating should be avoided. These conditions can result in

turn-on of the device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate protection

is required, an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 3)

is presented as a guide for estimating device performance for a

specific application. Other typical frequency vs collector current

unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot

smaller at each point. The information is based on measure-

ments of a typical device and is bounded by the maximum rated

junction temperature.

(the denominator) has been arbitrarily held to 10% of the on-

state time for a 50% duty factor. Other definitions are possible.

delay can establish an additional frequency limiting condition for

ling output ripple under a lightly loaded condition.

A 50% duty factor was used (Figure 3) and the conduction