OUT

IN

INB

IN_REF

UVLO

Level

Shift

LM5112

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SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006

LM5112 Tiny 7A MOSFET Gate Driver

Check for Samples: LM5112

1

FEATURES

DESCRIPTION

The LM5112 MOSFET gate driver provides high peak

2

•

Compound CMOS and Bipolar Outputs Reduce

gate drive current in the tiny WSON-6 package (SOT-

Output Current Variation

23 equivalent footprint) or an 8-Lead exposed-pad

•

7A sink/3A Source Current

MSOP package, with improved power dissipation

•

Fast Propagation Times (25 ns Typical)

required for high frequency operation. The compound

output

driver

stage

includes

MOS

and

bipolar

•

Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

transistors operating in parallel that together sink

with 2 nF Load)

more than 7A peak from capacitive loads. Combining

•

Inverting and Non-inverting Inputs Provide

the unique characteristics of MOS and bipolar

Either Configuration with a Single Device

devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is

•

Supply Rail Under-voltage Lockout Protection

provided to prevent damage to the MOSFET due to

•

Dedicated Input Ground (IN_REF) for Split

insufficient

gate

turn-on

voltage.

The

LM5112

Supply or Single Supply Operation

provides both inverting and non-inverting inputs to

•

Power Enhanced 6-pin WSON Package (3.0mm

satisfy requirements for inverting and non-inverting

x 3.0mm) or Thermally Enhanced MSOP-

gate drive with a single device type.

PowerPAD Package

•

Negative Relative to Input Ground

Block Diagram

Figure 1. Block Diagram of LM5112

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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

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PRODUCTION DATA information is current as of publication date.

Copyright © 2004–2006, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.