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HGTP1N120BN Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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HGTP1N120BN Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 8 page  ©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS Typical Performance Curves (Unless Otherwise Specified) (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 1 0 1.5 2 2.5 3 8 12 20 16 24 RG = 82Ω, L = 4mH, VCE = 960V TJ VGE 25oC 13V 150oC 13V 25oC 15V 150oC 15V ICE, COLLECTOR TO EMITTER CURRENT (A) 1 4 8 24 20 12 2 0.5 16 1.5 2.5 28 3 RG = 82Ω, L = 4mH, VCE = 960V TJ = 25 oC, T J = 150 oC, V GE = 13V TJ = 25 oC, T J = 150 oC, V GE = 15V 12 64 1.5 56 ICE, COLLECTOR TO EMITTER CURRENT (A) 2.5 84 72 76 3 0.5 60 68 80 TJ = 150 oC, V GE = 15V TJ = 25 oC, V GE = 13V RG = 82Ω, L = 4mH, VCE = 960V TJ = 150 oC, V GE = 13V TJ = 25 oC, V GE = 15V ICE, COLLECTOR TO EMITTER CURRENT (A) 0.5 1 2 160 240 1.5 120 280 360 2.5 3 320 200 RG = 82Ω, L = 4mH, VCE = 960V TJ = 25 oC, V GE = 13V OR 15V TJ = 150 oC, V GE = 13V OR 15V 0 2 4 6 13 7 8 9 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 11 8 10 12 14 15 14 16 18 PULSE DURATION = 250 µs DUTY CYCLE < 0.5%, VCE = 20V TC = -55 oC TC = 150 oC TC = 25 oC QG, GATE CHARGE (nC) 15 3 6 0 020 8 412 9 12 16 IG(REF) = 1mA, RL = 600Ω, TC = 25 oC VCE = 1200V VCE = 800V VCE = 400V HGTD1N120BNS, HGTP1N120BN |
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