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H11G1W Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11G1W Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  ELECTRICAL CHARACTERISTICS (T A = 25°C Unless otherwise specified.) 7/21/00 200045A Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER (IF = 10 mA) VF ALL 1.3 1.50 V Forward Voltage Forward Voltage Temp. VF ALL -1.8 mV/°C Coefficient TA Reverse Breakdown Voltage (IR = 10 µA) BVR ALL 3.0 25 V Junction Capacitance (VF = 0 V, f = 1 MHz) CJ ALL 50 pF (VF = 1 V, f = 1 MHz) ALL 65 pF Reverse Leakage Current (VR = 3.0 V) IR ALL 0.001 10 µA DETECTOR H11G1 100 Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO H11G2 80 Collector to Emitter H11G3 55 H11G1 100 V Collector to Base (IC = 100 µA) BVCBO H11G2 80 H11G3 55 Emitter to Base BVEBO ALL 7 10 (VCE = 80 V, IF = 0) H11G1 Leakage Current (VCE = 60 V, IF = 0) H11G2 100 nA Collector to Emitter (VCE = 30 V, IF = 0) ICEO H11G3 (VCE = 80 V, IF = 0, TA = 80°C) H11G1 100 µA (VCE = 60 V, IF = 0, TA = 80°C) H11G2 INDIVIDUAL COMPONENT CHARACTERISTICS DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER Current Transfer Ratio (IF = 10 mA, VCE = 1 V) H11G1/2 100 (1000) Collector to Emitter CTR mA (%) (IF = 1 mA, VCE = 5 V) H11G1/2 5 (500) H11G3 2 (200) (IF = 16 mA, IC = 50 mA) H11G1/2 0.85 1.0 Saturation Voltage (IF = 1 mA, IC = 1 mA) VCE (SAT) H11G1/2 0.75 1.0 V (IF = 20 mA, IC = 50 mA) H11G3 0.85 1.2 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit SWITCHING TIMES (RL = 100 , IF = 10 mA) ton ALL 5 Turn-on Time µs Turn-off Time (VCE = 5 V) Pulse Width 300 µs, f 30 Hz) toff ALL 100 TRANSFER CHARACTERISTICS HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 ** All typical values at TA = 25°C |
Similar Part No. - H11G1W |
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Similar Description - H11G1W |
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