FDD86326 datasheet(2/6 Pages) FAIRCHILD

Part #	FDD86326

Description	N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

2 / 6 page

FDD86326 Rev.C2

www.fairchildsemi.com

2

Electrical Characteristics T

J = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 PA, VGS = 0 V

80

V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 PA, referenced to 25 °C

67

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 64 V, VGS = 0 V

1

PA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

nA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 PA

2

3.1

4

V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 PA, referenced to 25 °C

-8.5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 8 A

19

23

m

:

VGS = 6 V, ID = 4.6 A

26

37

VGS = 10 V, ID = 8 A, TJ = 125 °C

33

44

gFS

Forward Transconductance

VDS = 10 V, ID = 8 A

21

S

(Note 2)

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 50 V, VGS = 0 V,

f = 1 MHz

780

1035

pF

Coss

Output Capacitance

180

240

pF

Crss

Reverse Transfer Capacitance

15

25

pF

Rg

Gate Resistance

0.4

:

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 50 V, ID = 8 A,

VGS = 10 V, RGEN = 6 :

7.6

15

ns

tr

Rise Time

3.0

10

ns

td(off)

Turn-Off Delay Time

13.4

24

ns

tf

Fall Time

2.9

10

ns

Qg

Total Gate Charge

VGS = 0 V to 10 V

VDD = 50 V,

ID = 8 A

13.4

19

nC

Qg

Total Gate Charge

VGS = 0 V to 5 V

7.6

11

nC

Qgs

Gate to Source Gate Charge

4.0

nC

Qgd

Gate to Drain “Miller” Charge

3.7

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 8 A

(Note 2)

0.8

1.3

V

VGS = 0 V, IS = 2.6 A

(Note 2)

0.7

1.2

trr

Reverse Recovery Time

IF = 8 A, di/dt = 100 A/Ps

43

68

ns

Qrr

Reverse Recovery Charge

43

68

nC

Notes:

1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RTJC is guaranteed by design while RTJA is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300

Ps, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V.

a. 40 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 96 °C/W when mounted on a

minimum pad of 2 oz copper.