2

Symbol

Parameter

Units

Absolute Maximum

Vin

Max input voltage

V

0.8

Supply Voltage (Id=52mA)

V

5.5

mW

400

CW RF Input Power

dBm

13

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device is excess

of any of these limits may cause

permanent damage.

2. Source lead temperature is 25°C.

Derate 7.7mW/°C for TL > 125°C.

3. Thermal resistance measured

using150°CInfra-RedMicroscopy

Technique.

MGA-53589 Electrical Specification

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

stdev(4)

Current Drawn

N/A

mA

40

52

70

0.001

NF

Noise Figure

dB

-

-

-

1.24

1.66

1.61

-

2

-

-

0.02

-

Gain

Gain

dB

-

14

18.2

15.8

15.3

-

17

-

-

0.07

-

OIP3

dBm

-

34

-

36.8

37

37.2

-

-

-

-

0.66

-

P1dB

Output Power at 1dB Gain Compression

dBm

-

16.5

-

18.6

18.2

17.6

-

20.5

-

-

0.12

-

PAE

Power Added Efficiency at P1dB

%

-

-

-

24.7

27.3

22.7

-

-

-

-

0.21

-

IRL

Input Return Loss

dB

-

-

-

13.6

14.4

11.6

-

-

-

-

0.29

-

ORL

Output Return Loss

dB

-

-

-

20.3

15.7

14.1

-

-

-

-

0.31

-

ISO

Isolation

dB

-

-

-

22.1

22.4

22.3

-

-

-

-

0.09

-

Notes:

1. Measurements obtained from a test circuit described in Figure 34. Input and output matching components are tuned for consistent OIP3; while

keeping VSWR better than 2:1. Data obtained are minus board losses.

2. I) Output power level and frequency of two fundamental tones at 0.9GHz; F1 & F2 =-0.38dB; F1=0.905GHz and F2=0.915GHz

II) Output power level and frequency of two fundamental tones at 1.9GHz; F1 & F2 =5.49dB; F1=1.905GHz and F2=1.915GHz

III) Output power level and frequency of two fundamental tones at 2.4GHz; F1 & F2 =5dB; F1=2.405GHz and F2=2.415GHz

3. Standard deviation data are based on at least 500 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have

nominal values anywhere between the upper and lower specification limits.