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CM600DY-24A Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM600DY-24A Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 4 page CM600DY-24A Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 2 Rev. 11/07 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM600DY-24A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 80°C*) IC 600 Amperes Peak Collector Current ICM 1200** Amperes Emitter Current*** (TC = 25°C) IE 600 Amperes Peak Emitter Current*** IEM 1200** Amperes Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 3670 Watts Mounting Torque, M6 MainTerminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts IC = 600A, VGE = 15V, Tj = 125°C — 2.4 — Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 2700 — nC Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V — — 3.8 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 94 nf Output Capacitance Coes VCE = 10V, VGE = 0V — — 8.0 nf Reverse Transfer Capacitance Cres — — 1.8 nf Inductive Turn-on Delay Time td(on) — — 660 ns Load Rise Time tr VCC = 600V, IC = 600A, — — 190 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns Time Fall Time tf Inductive Load — — 350 ns Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr IE = 600A — 19 — µC *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). |
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