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CM600DY-24A Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # CM600DY-24A
Description  Dual IGBTMOD A-series Module 600 Amperes/1200 Volts
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CM600DY-24A Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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CM600DY-24A
Dual IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
2
Rev. 11/07
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
CM600DY-24A
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
Collector Current (DC, TC = 80°C*)
IC
600
Amperes
Peak Collector Current
ICM
1200**
Amperes
Emitter Current*** (TC = 25°C)
IE
600
Amperes
Peak Emitter Current***
IEM
1200**
Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)
PC
3670
Watts
Mounting Torque, M6 MainTerminal
40
in-lb
Mounting Torque, M6 Mounting
40
in-lb
Weight
580
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
VISO
2500
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C
2.1
3.0
Volts
IC = 600A, VGE = 15V, Tj = 125°C
2.4
Volts
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
2700
nC
Emitter-Collector Voltage**
VEC
IE = 600A, VGE = 0V
3.8
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
94
nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
8.0
nf
Reverse Transfer Capacitance
Cres
1.8
nf
Inductive
Turn-on Delay Time
td(on)
660
ns
Load
Rise Time
tr
VCC = 600V, IC = 600A,
190
ns
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 0.52Ω,
700
ns
Time
Fall Time
tf
Inductive Load
350
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
250
ns
Diode Reverse Recovery Charge**
Qrr
IE = 600A
19
µC
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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