MRF284S datasheet(2/12 Pages) MOTOROLA

Part #	MRF284S

Description	RF Power Field-Effect Transistors

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MRF284 MRF284S

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 µAdc)

VGS(th)

2.0

3.0

4.0

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 200 mAdc)

VGS(q)

3.0

4.0

5.0

Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1.0 Adc)

VDS(on)

—

0.3

0.6

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 1.0 Adc)

gfs

1.0

1.5

—

S

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

—

43

—

pF

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Coss

—

23

—

pF

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

1.4

—

pF

FUNCTIONAL TESTS (in Motorola Test Fixture)

Common–Source Power Gain

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Gps

9

10.5

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

η

30

35

—

%

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IMD

—

–32

–29

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

IRL

9

15

—

dB

Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Gps

9

10.4

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

η

—

35

—

%

Intermodulation Distortion

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IMD

—

–34

—

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

IRL

9

15

—

dB

Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

Gps

8.5

9.5

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

η

35

45

—

%

Output Mismatch Stress

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz, VSWR = 10:1,

at All Phase Angles)

Ψ

No Degradation In Output Power

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