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BSP315P-E6327 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSP315P-E6327 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page BSP315P Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: VGS 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A -2.6 ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Ω 2.6 BSP 315 P a VGS [V] = a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 VDS 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -2.4 A -2.8 BSP 315 P VGS [V] a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l Ptot = 2W l -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 VGS 0.0 -0.5 -1.0 -1.5 -2.0 A -3.0 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0.0 0.5 1.0 1.5 2.0 A 3.0 ID 0.0 0.5 1.0 1.5 S 2.5 20 12-11-26 Rev.1. 7 Page 6 |
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