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BSM50GB120DN2 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSM50GB120DN2 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 10 page  4 Oct-21-1997 BSM 50 GB 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 0 50 100 150 200 250 300 350 W 450 Ptot Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 3 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 14.0µs Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 0 10 20 30 40 50 60 70 A 90 IC Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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