EL817MC datasheet(3/14 Pages) EVERLIGHT

Part #	EL817MC

Description	4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

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Manufacturer	EVERLIGHT [Everlight Electronics Co., Ltd]

Direct Link	http://www.everlight.com

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 series

3

www.everlight.com

Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)

Input

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage

VF

-

1.2

1.4

V

IF = 20mA

Reverse Current

IR

-

10

µA

VR = 4V

Input capacitance

Cin

-

30

250

pF

V = 0, f = 1kHz

Output

Parameter

Symbol

Min

Typ.

Max.

Unit

Condition

Collector-Emitter dark

current

ICEO

-

100

nA

VCE = 20V, IF = 0mA

Collector-Emitter

breakdown voltage

BVCEO

35

-

V

IC = 0.1mA

Emitter-Collector

breakdown voltage

BVECO

6

-

V

IE = 0.1mA

Transfer Characteristics

Parameter

Symbol

Min

Typ.

Max.

Unit

Condition

Current

Transfer

ratio

EL817

CTR

50

-

600

%

IF = 5mA ,VCE = 5V

EL817A

80

-

160

EL817B

130

-

260

EL817C

200

-

400

EL817D

300

-

600

EL817X

100

-

200

EL817Y

150

-

300

Collector-Emitter

saturation voltage

VCE(sat)

-

0.1

0.2

V

IF = 20mA ,IC = 1mA

Isolation resistance

RIO

5×10

10

-

Ω

VIO = 500Vdc,

40~60% R.H.

Floating capacitance

CIO

-

0.6

1.0

pF

VIO = 0, f = 1MHz

Cut-off frequency

fc

-

80

-

kHz

VCE = 5V, IC = 2mA

RL = 100Ω, -3dB

Rise time

tr

-

4

18

µs

VCE = 2V, IC = 2mA,

RL = 100Ω

Fall time

tf

-

3

18

µs

* Typical values at Ta = 25°C

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