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FS6S1565RB-TU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FS6S1565RB-TU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page FS6S1565RB 2 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=8.5mH, starting Tj=25 °C 4. L=13uH, starting Tj=25 °C Parameter Symbol Value Unit Drain-source(GND) voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-source (GND) Voltage VGS ±30 V Drain current pulsed (2) IDM 60 ADC Single pulsed avalanche energy (3) EAS 1040 mJ Single Pulsed Avalanche current (4) IAS 37 A Continuous drain current (Tc = 25°C) ID 15 ADC Continuous drain current (TC=100 °C) ID 9.5 ADC Supply voltage VCC 35 V Input Voltage Range VFB −0.3 to VCC V VS_S −0.3 to 10 V Total Power Dissipation PD(Watt H/S) 270 W Derating 2.17 W/ °C Operating junction temperature Tj +160 °C Operating Ambient Temperature TA −25 to +85 °C Storage Temperature range TSTG −55 to +150 °C |
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