DMG5802LFX

Document number: DS35009 Rev. 4 - 2

2 of 6

www.diodes.com

December 2012

© Diodes Incorporated

DMG5802LFX

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

24

V

Gate-Source Voltage

±12

V

Steady

State

6.5

5.2

A

Steady

State

5.6

4.5

A

Pulsed Drain Current (Note 6)

70

A

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 5)

0.98

W

126.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

24

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.6

0.9

1.5

V

Static Drain-Source On-Resistance

-

11

15

mΩ

-

12

17

-

13

18

-

14

20

Forward Transfer Admittance

-

17

-

S

Diode Forward Voltage

-

0.6

0.9

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

1066.4

-

pF

f = 1.0MHz

Output Capacitance

-

132.0

-

Reverse Transfer Capacitance

-

127.1

-

Gate Resistance

-

1.47

-

Ω

-

14.5

-

nC

-

31.3

-

Gate-Source Charge

-

2.0

-

Gate-Drain Charge

-

3.1

-

Turn-On Delay Time

-

3.69

-

ns

Turn-On Rise Time

-

13.43

-

ns

Turn-Off Delay Time

-

32.18

-

ns

Turn-Off Fall Time

-

22.45

-

ns

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.