2SK3892

2

SJG00043BED

This product complies with the RoHS Directive (EU 2002/95/EC).



Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Diode forward voltage

-

1.5

V

Reverse recovery time

127

ns

Reverse recovery charge

756

nC

Gate charge load

50

nC

Gate-source charge

12

nC

Gate-drain charge

18

nC

Thermal resistance (ch-c)

3.13

°

C/W

Thermal resistance (ch-a)

62.5

°

C/W

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.