1

MRF185

MOTOROLA RF DEVICE DATA

Advance Information

The RF MOSFET Line

RF POWER

Field-Effect Transistor

N–Channel Enhancement–Mode Lateral MOSFET

• High Gain, Rugged Device

• Broadband Performance from HF to 1 GHz

• Bottom Side Source Eliminates DC Isolators, Reducing Common

Mode Inductances

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

65

Vdc

Gate–Source Voltage

VGS

±20

Vdc

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

250

1.45

Watts

W/

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 1 mAdc)

V(BR)DSS

65

–

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

IDSS

–

–

1

µAdc

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0 V)

IGSS

–

–

1

µAdc

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF185/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF185

85 WATTS, 1.0 GHz

28 VOLTS

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 375B–02, STYLE 2

D

G

S

(FLANGE)

D

G

REV 1