2N5064RLRAG datasheet(1/7 Pages) ONSEMI

Part #	2N5064RLRAG

Description	Sensitive Gate Silicon Controlled Rectifiers

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September, 2011 − Rev. 10

1

Publication Order Number:

2N5060/D

2N5060 Series

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO−92/TO-226AA package which

is readily adaptable for use in automatic insertion equipment.

Features

• Sensitive Gate Trigger Current − 200 mA Maximum

• Low Reverse and Forward Blocking Current − 50 mA Maximum,

TC = 110°C

• Low Holding Current − 5 mA Maximum

• Passivated Surface for Reliability and Uniformity

• These are Pb−Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 110°C, Sine Wave,

50 to 60 Hz, RGK = 1 kW)

2N5060

2N5061

2N5062

2N5064

VDRM,

VRRM

30

60

100

200

V

On-State Current RMS (180° Conduction

Angles; TC = 80°C)

IT(RMS)

0.8

A

*Average On-State Current

(180° Conduction Angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

*Peak Non-repetitive Surge Current,

TA = 25°C (1/2 cycle, Sine Wave, 60 Hz)

ITSM

10

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

0.4

A2s

*Average On-State Current

(180° Conduction Angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

*Forward Peak Gate Power (Pulse Width v

1.0 msec; TA = 25°C)

PGM

0.1

W

*Forward Average Gate Power

(TA = 25°C, t = 8.3 ms)

PG(AV)

0.01

W

*Forward Peak Gate Current (Pulse Width

v 1.0 msec; TA = 25°C)

IGM

1.0

A

*Reverse Peak Gate Voltage (Pulse Width

v 1.0 msec; TA = 25°C)

VRGM

5.0

V

*Operating Junction Temperature Range

TJ

−40 to

+110

°C

*Storage Temperature Range

Tstg

−40 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*Indicates JEDEC Registered Data.

SILICON CONTROLLED

RECTIFIERS

0.8 A RMS, 30 − 200 V

K

G

A

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

TO−92

CASE 29

STYLE 10

50xx

Specific Device Code

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N

50xx

YWW

PIN ASSIGNMENT

1

2

3

Gate

Anode

Cathode

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