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RUM002N05T2L Datasheet(PDF) 2 Page - Rohm |
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RUM002N05T2L Datasheet(HTML) 2 Page - Rohm |
2 / 7 page 2/5 www.rohm.com ○ c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A Data Sheet RUM002N05 Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AV GS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS 50 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS -- 1 AV DS=50V, VGS=0V Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA -1.6 2.2 ID=200mA, VGS=4.5V -1.7 2.4 ID=200mA, VGS=2.5V -1.9 2.7 ID=100mA, VGS=1.8V -2.0 4.0 ID=40mA, VGS=1.5V -2.4 7.2 ID=20mA, VGS=1.2V Forward transfer admittance l Yfs l 0.4 - - S ID=200mA, VDS=10V Input capacitance Ciss -25 - pF VDS=10V Output capacitance Coss -6 - pF VGS=0V Reverse transfer capacitance Crss -3 - pF f=1MHz Turn-on delay time td(on) -4 - ns ID=100mA, VDD 30V Rise time tr -6 - ns VGS=4.5V Turn-off delay time td(off) -15 - ns RL=300 Fall time tf -55 - ns RG=10 *Pulsed Conditions Parameter Static drain-source on-state resistance RDS (on) * * * * * * * * * * Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Forward voltage VSD -- 1.2 V Is=200mA, VGS=0V *Pulsed Conditions Parameter * |
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