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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.A

2.5V Drive Nch MOSFET

RJU003N03

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) Low voltage drive (2.5V drive).

Applications

Switching

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

RJU003N03

T106

3000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗2

Parameter

V

Symbol

V

mA

A

mW

°C

Tch

°C

Tstg

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

30

150

−55 to +150

±12

±300

±1.2

200

Thermal resistance

Parameter

°C/W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

625

∗ Each terminal mounted on a recommended land

∗

Each lead has same dimensions

UMT3

Abbreviated symbol : LP

0.2

0.15

0.9

0.7

0.3

(3)

0.65

(2)

2.0

1.3

(1)

0.65

(1) Source

(2) Gate

(3) Drain

(1)

(3)

(2)

∗2

∗1

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE